vishay siliconix sup40p10-43 document number: 65458 s09-2035-rev. a, 05-oct-09 www.vishay.com 1 new product p-channel 100-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g tested ? compliant to rohs directive 2002/95/ec applications ? lcd inverter - backlighting notes: a. duty cycle 1 %. b. see soa curve for voltage derating. product summary v ds (v) r ds(on) ( ) i d (a) c q g (typ.) - 100 0.043 at v gs = - 10 v - 36 54 nc 0.048 at v gs = - 4.5 v - 34.4 t o -220ab top view gd s ordering information: SUP40P10-43-GE3 (le ad (pb)-free and halogen-free) drain connected to tab s g d p-channel mosfet absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 100 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) c t c = 25 c i d - 36 a t c = 125 c - 16 pulsed drain current i dm - 40 avalanche current l = 0.1 mh i as - 35 single pulse avalanche energy a e as 61 mj power dissipation t c = 25 c p d 125 b w t a = 25 c 2.0 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol limit unit junction-to-ambient free air r thja 62 c/w junction-to-case r thjc 1.0
www.vishay.com 2 document number: 65458 s09-2035-rev. a, 05-oct-09 vishay siliconix sup40p10-43 new product notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 100 v gate-threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1 - 3 v ds temperature coefficient v ds /t j i d = - 250 a - 109 mv/c v gs(th) temperature coefficient v gs(th) /t j i d = - 250 a 5.9 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 100 v, v gs = 0 v - 1 a v ds = - 100 v, v gs = 0 v, t j = 125 c - 50 v ds = - 100 v, v gs = 0 v, t j = 150 c - 200 on-state drain current a i d(on) v ds = - 5 v, v gs = - 10 v - 40 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 10 a 0.036 0.043 v gs = - 10 v, i d = - 10 a, t j = 125 c 0.078 v gs = - 10 v, i d = - 10 a, t j = 150 c 0.088 v gs = - 4.5 v, i d = - 8 a 0.040 0.048 forward transconductance a g fs v ds = - 15 v, i d = - 10 a 38 s dynamic b input capacitance c iss v gs = 0 v, v ds = - 50 v, f = 1 mhz 4600 pf output capacitance c oss 230 reverse transfer capacitance c rss 175 total gate charge c q g v ds = - 50 v, v gs = - 10 v, i d = - 10 a 106 160 nc v ds = - 50 v, v gs = - 4.5 v, i d = - 10 a 54 81 gate-source charge c q gs 14 gate-drain charge c q gd 26 gate resistance r g f = 1.0 mhz 0.8 4 8 tu r n - o n d e l ay t i m e c t d(on) v dd = - 50 v, r l = 6.3 i d ? - 8 a, v gen = - 10 v, r g = 1.0 15 25 ns rise time c t r 20 30 turn-off delay time c t d(off) 110 165 fall time c t f 100 150 tu r n - o n d e l ay t i m e c t d(on) v dd = - 50 v, r l = 6.3 i d ? 8 a, v gen = - 4.5 v, r g = 1.0 42 65 rise time c t r 160 240 turn-off delay time c t d(off) 100 150 fall time c t f 100 150 source-drain diode ratings and characteristics t c = 25 c b continuous current i s - 40 a pulsed current i sm - 40 forward voltage a v sd i f = - 10 a, v gs = 0 v - 0.8 - 1.5 v reverse recovery time t rr i f = - 8 a, di/dt = 100 a/s 60 90 ns peak reverse recovery current i rm(rec) - 5 - 7.5 a reverse recovery charge q rr 150 225 nc
document number: 65458 s09-2035-rev. a, 05-oct-09 www.vishay.com 3 vishay siliconix sup40p10-43 new product typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current and gate voltage gate charge 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 10 v thr u 4 v 3 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 2 v 0.034 0.036 0.03 8 0.040 0.042 0.044 0 5 10 15 20 25 30 35 v gs = 10 v i d - drain c u rrent (a) v gs = 4.5 v r ds(on) - on-resistance ( ) 0 2 4 6 8 10 0 204060 8 0 100 120 i d = 9.2 a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds = 8 0 v v ds = 50 v transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 0.00.51.01.52.02.53.03.5 t a = 125 c - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 25 c 0 1000 2000 3000 4000 5000 6000 7000 0 10203040506070 8 0 c oss c iss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c rss 0.5 0. 8 1.1 1.4 1.7 2.0 2.3 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v , 4.5 v t j - j u nction temperat u re (c) r ds(on) - on-resistance ( n ormalized) i d = 9.2 a
www.vishay.com 4 document number: 65458 s09-2035-rev. a, 05-oct-09 vishay siliconix sup40p10-43 new product typical characteristics 25 c, unless otherwise noted source-drain diode forward voltage threshold voltage 1.0 1.2 1 10 40 0.0 0.2 0.4 0.6 0. 8 t j = 25 c t j = 150 c v sd - so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 1.1 1.3 1.5 1.7 1.9 2.1 2.3 - 50 - 25 0 25 50 75 100 125 150 ( v ) v gs(th) t j - temperat u re (c) i d =250 a on-resistance vs. gate-to-source voltage single pulse avalanche capability 0.02 0.03 0.04 0.05 0.06 0.07 0.0 8 234567 8 910 v gs - gate-to-so u rce v oltage ( v ) r ds(on) - drain-to-so u rce on-resistance ( ) t a = 25 c t a = 125 c 100 0.000001 0.0001 0.01 1 10 0.00001 t a - time in a v alanche (s) i c - peak a v alanche c u rrent (a) t a l i a b v - v dd 0.001 safe operating area, junction-to-ambient 0.1 100 1 1000 0.01 i d - drain c u rrent (a) 0.1 v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 1ms 100 s 1 10 100 10 t a = 25 c single p u lse limited b yr ds(on) * dc 10 s b v dss 10 ms
document number: 65458 s09-2035-rev. a, 05-oct-09 www.vishay.com 5 vishay siliconix sup40p10-43 new product typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65458 . current derating* 0 10 20 30 40 50 0 255075100125150 t c - case temperat u re (c) i d - drain c u rrent (a) power derating, junction-to-case 0 30 60 90 120 150 1 8 0 0 25 50 75 100 125 150 t c - case temperat u re (c) po w er ( w ) normalized thermal transient impedance, junction-to-case 1 0.1 0.01 d u ty cycle = 0.5 sq u are w a v ep u lse d u ration (s) n ormalized effecti v e transient thermal impedance 10 -3 10 -2 1 10 -1 10 -4 0.02 single p u lse 0.1 0.2 0.05
document number: 71195 www.vishay.com revison: 01-nov-10 1 package information vishay siliconix to-220ab note * m = 1.32 mm to 1.62 mm (dimension including protrusion) heatsink hole for hvm * m 3 2 1 l l(1) d h(1) q ? p a f j(1) b (1) e(1) e e b c millimeters inches dim. min. max. min. max. a 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 d 14.85 15.49 0.585 0.610 e 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 f 1.14 1.40 0.045 0.055 h(1) 6.09 6.48 0.240 0.255 j(1) 2.41 2.92 0.095 0.115 l 13.35 14.02 0.526 0.552 l(1) 3.32 3.82 0.131 0.150 ? p 3.54 3.94 0.139 0.155 q 2.60 3.00 0.102 0.118 ecn: x10-0416-rev. m, 01-nov-10 dwg: 5471
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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